- 专利标题： Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the same
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申请号： US15210867申请日： 2016-07-14
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公开(公告)号： US10026751B2公开(公告)日： 2018-07-17
- 发明人: Titash Rakshit , Borna J. Obradovic , Rwik Sengupta , Wei-E Wang , Ryan Hatcher , Mark S. Rodder
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Lewis Roca Rothgerber Christie LLP
- 主分类号： H01L27/01
- IPC分类号： H01L27/01 ; H01L27/12 ; H01L23/522 ; H01L23/528 ; H01L29/24 ; H01L29/45 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L21/84 ; H01L29/10
摘要：
A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is M3 or higher. Each of the FETs includes a channel region of a crystalline material. The crystalline material may include one or more transition metal dichalcogenide materials such as MoS2, WS2, WSe2, and/or combinations thereof.
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