Invention Grant
- Patent Title: Non-planar transistors and methods of fabrication thereof
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Application No.: US15206794Application Date: 2016-07-11
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Publication No.: US10032915B2Publication Date: 2018-07-24
- Inventor: Subhash M. Joshi , Michael L. Hattendorf
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L29/16 ; H01L29/161
Abstract:
The present description relates to the formation source/drain structures within non-planar transistors, wherein fin spacers are removed from the non-planar transistors in order to form the source/drain structures from the non-planar transistor fins or to replace the non-planar transistor fins with appropriate materials to form the source/drain structures.
Public/Granted literature
- US20160351716A1 NON-PLANAR TRANSISTORS AND METHODS OF FABRICATION THEREOF Public/Granted day:2016-12-01
Information query
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