- 专利标题： Highly responsive III-V photodetectors using ZnO:Al as n-type emitter
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申请号： US15604574申请日： 2017-05-24
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公开(公告)号： US10043920B2公开(公告)日： 2018-08-07
- 发明人: Jeehwan Kim , Ning Li , Devendra K. Sadana , Brent A. Wacaser
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L31/02
- IPC分类号： H01L31/02 ; H01L31/0304 ; H01L31/105 ; H01L31/0224 ; H01L31/18
摘要：
A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate and including a III-V material. A transparent II-VI n-type layer is formed on the intrinsic layer and functions as an emitter and an n-type ohmic contact.
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