Invention Grant
- Patent Title: Preparation methods of low temperature poly-silicon thin film and transistor and laser crystallization apparatus
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Application No.: US15228140Application Date: 2016-08-04
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Publication No.: US10049873B2Publication Date: 2018-08-14
- Inventor: Xiaowei Xu , Xiaolong Li
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201610023998 20160114
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; H01L29/66 ; H01L29/786 ; B23K26/00

Abstract:
The invention provides a preparation method of a low temperature poly-silicon thin film, a preparation method of a low temperature poly-silicon thin film transistor, and a laser crystallization apparatus, and belongs to the technical field of display. The preparation method of a low temperature poly-silicon thin film of the invention comprises: forming an amorphous silicon thin film on a transparent substrate; and performing laser annealing on said amorphous silicon thin film from a side of said amorphous silicon thin film departing from said substrate, and performing laser irradiation from a side of said substrate departing from said amorphous silicon thin film, to form a low temperature poly-silicon thin film. The preparation method of a low temperature poly-silicon thin film of the invention may not only perform laser annealing on an amorphous silicon thin film form a side of the amorphous silicon thin film departing from the substrate, but also perform laser irradiation from a side of the substrate departing from the amorphous silicon thin film, and the temperature of the amorphous silicon thin film can be retained by performing laser irradiation from a side of the substrate departing from the amorphous silicon thin film. In this way, the crystallization period of poly-silicon may be elongated, and it is possible to obtain crystal grains with larger sizes, to increase carrier mobility, and to reduce drain current.
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