公开(公告)号：US10347532B2

公开(公告)日：2019-07-09

申请号：US15104551

申请日：2015-10-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaowei Xu ,  Libin Liu ,  Liangjian Li ,  Chunping Long

IPC: H01L21/77 ,  H01L23/552 ,  H01L27/12 ,  H01L27/32

Abstract: The present disclosure provides a Low Temperature Poly Silicon (LTPS) backboard, a method for manufacturing the LTPS, and a light-emitting device. The LTPS backboard includes: a base substrate, and a thin film transistor (TFT) and a light blocking layer that are arranged above the base substrate, wherein the light blocking layer is arranged above the TFT, and the light blocking layer is configured for preventing an irradiation light from irradiating onto the TFT.

公开(公告)号：US10332946B2

公开(公告)日：2019-06-25

申请号：US15920669

申请日：2018-03-14

Applicant: Boe Technology Group Co., Ltd.

Inventor： Libin Liu ,  Xiaowei Xu ,  Liangjian Li

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting display panel and manufacturing method thereof and a display device, which can reduce the critical dimension bias of the pixel defining layer and improve the display uniformity is disclosed. The organic light emitting display panel includes a pixel defining layer, which is provided with a plurality of light emitting material filling areas, a metal layer provided on the pixel defining layer; the metal layer is provided with openings corresponding to the light emitting material filling areas respectively. The display effect of the organic light emitting display device is thereby improved.

公开(公告)号：US10049873B2

公开(公告)日：2018-08-14

申请号：US15228140

申请日：2016-08-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaowei Xu ,  Xiaolong Li

IPC: H01L21/02 ,  H01L21/67 ,  H01L29/66 ,  H01L29/786 ,  B23K26/00

Abstract: The invention provides a preparation method of a low temperature poly-silicon thin film, a preparation method of a low temperature poly-silicon thin film transistor, and a laser crystallization apparatus, and belongs to the technical field of display. The preparation method of a low temperature poly-silicon thin film of the invention comprises: forming an amorphous silicon thin film on a transparent substrate; and performing laser annealing on said amorphous silicon thin film from a side of said amorphous silicon thin film departing from said substrate, and performing laser irradiation from a side of said substrate departing from said amorphous silicon thin film, to form a low temperature poly-silicon thin film. The preparation method of a low temperature poly-silicon thin film of the invention may not only perform laser annealing on an amorphous silicon thin film form a side of the amorphous silicon thin film departing from the substrate, but also perform laser irradiation from a side of the substrate departing from the amorphous silicon thin film, and the temperature of the amorphous silicon thin film can be retained by performing laser irradiation from a side of the substrate departing from the amorphous silicon thin film. In this way, the crystallization period of poly-silicon may be elongated, and it is possible to obtain crystal grains with larger sizes, to increase carrier mobility, and to reduce drain current.

公开(公告)号：US20170294345A1

公开(公告)日：2017-10-12

申请号：US15512372

申请日：2016-03-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaoyong Lu ,  Hongwei Tian ,  Yueping Zuo ,  Xiaowei Xu ,  Wenqing Xu ,  Chunping Long

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/02063 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/67 ,  H01L21/76814

Abstract: Provided are a method and an apparatus for manufacturing a semiconductor device. The method comprises: forming a first wiring layer on a base substrate; forming an interlayer dielectric layer on the first wiring layer, with contact holes being provided in the interlayer dielectric layer; subjecting bottoms of the contact holes to a dry cleaning process; and forming a second wiring layer on the interlayer dielectric layer, wherein the second wiring layer is electrically connected to the first wiring layer via the contact holes.

公开(公告)号：US20170207086A1

公开(公告)日：2017-07-20

申请号：US15228140

申请日：2016-08-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaowei Xu ,  Xiaolong Li

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/67 ,  H01L29/786

CPC classification number: H01L21/02675 ,  B23K26/00 ,  B23K26/0006 ,  B23K26/0619 ,  B23K26/0622 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/18 ,  B23K2103/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/02691 ,  H01L29/6675 ,  H01L29/78672

Abstract: The invention provides a preparation method of a low temperature poly-silicon thin film, a preparation method of a low temperature poly-silicon thin film transistor, and a laser crystallization apparatus, and belongs to the technical field of display. The preparation method of a low temperature poly-silicon thin film of the invention comprises: forming an amorphous silicon thin film on a transparent substrate; and performing laser annealing on said amorphous silicon thin film from a side of said amorphous silicon thin film departing from said substrate, and performing laser irradiation from a side of said substrate departing from said amorphous silicon thin film, to form a low temperature poly-silicon thin film. The preparation method of a low temperature poly-silicon thin film of the invention may not only perform laser annealing on an amorphous silicon thin film form a side of the amorphous silicon thin film departing from the substrate, but also perform laser irradiation from a side of the substrate departing from the amorphous silicon thin film, and the temperature of the amorphous silicon thin film can be retained by performing laser irradiation from a side of the substrate departing from the amorphous silicon thin film. In this way, the crystallization period of poly-silicon may be elongated, and it is possible to obtain crystal grains with larger sizes, to increase carrier mobility, and to reduce drain current.

公开(公告)号：US20170077194A1

公开(公告)日：2017-03-16

申请号：US15122887

申请日：2015-09-29

Applicant: Boe Technology Group Co., Ltd.

Inventor： Libin Liu ,  Xiaowei Xu ,  Liangjian Li

IPC: H01L27/32

CPC classification number: H01L27/3246 ,  H01L27/32 ,  H01L27/3276 ,  H01L51/56 ,  H01L2227/323

Abstract: The present invention discloses an organic light emitting display panel and manufacturing method thereof and a display device, which can reduce the critical dimension bias of the pixel defining layer and improve the display uniformity. The organic light emitting display panel provide by the present invention comprises: a pixel defining layer, which is provided with a plurality of light emitting material filling areas, being characterized by further comprising: a metal layer provided on the pixel defining layer; the metal layer is provided with openings corresponding to the light emitting material filling areas respectively. The solutions provided by the present invention are used to improve the display effect of the organic light emitting display device.

Abstract translation: 本发明公开了一种有机发光显示面板及其制造方法以及显示装置，能够降低像素限定层的临界尺寸偏差，提高显示均匀性。 通过本发明提供的有机发光显示面板包括：具有多个发光材料填充区域的像素限定层，其特征在于还包括：设置在所述像素限定层上的金属层; 金属层分别设置有与发光材料填充区域对应的开口。 本发明提供的方案用于改善有机发光显示装置的显示效果。

公开(公告)号：US20160365458A1

公开(公告)日：2016-12-15

申请号：US15104524

申请日：2015-11-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lei Shi ,  Xiaowei Xu

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/426 ,  H01L21/027 ,  H01L21/266 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/78648 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02675 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/28 ,  H01L21/426 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1274 ,  H01L29/6675 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/7869

Abstract: Disclosed are an array substrate, a method for producing the same and a display device including the same. The array substrate includes a substrate; a first gate, a first gate insulation layer, an active layer, a second gate insulation layer, a second gate, a third gate insulation layer and source and drain electrodes provided on the substrate in sequence. Two side regions outside a region of the active layer corresponding to the second gate are source and drain-lightly doped regions and source and drain-heavily doped regions, respectively. The source and drain electrodes are contacted with the heavily doped source and drain regions, respectively. The first gate is provided below the lightly doped drain region corresponding to the drain electrode, or the first gate includes first and second sub parts which are respectively provided below the lightly doped source and drain regions corresponding to the source and drain electrodes respectively.

Abstract translation: 公开了阵列基板及其制造方法以及包括该阵列基板的显示装置。 阵列基板包括基板; 第一栅极，第一栅极绝缘层，有源层，第二栅极绝缘层，第二栅极，第三栅极绝缘层以及依次设置在基板上的源极和漏极。 对应于第二栅极的有源层的区域之外的两个侧面区域分别是源极和漏极 - 轻掺杂区域以及源极和漏极 - 重掺杂区域。 源极和漏极分别与重掺杂的源极和漏极区接触。 第一栅极设置在对应于漏电极的轻掺杂漏极区域的下方，或者第一栅极包括分别设置在对应于源电极和漏电极的轻掺杂源极和漏极区域之下的第一和第二子部分。

公开(公告)号：US10403200B2

公开(公告)日：2019-09-03

申请号：US15038219

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Xiaowei Xu ,  Libin Liu

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  G09G3/3233

Abstract: In accordance with various embodiments of the disclosed subject matter, a transparent display panel and a related display device are provided. In some embodiments, a transparent display panel is provided, the transparent display panel comprises: a first region and a second region, wherein the first region comprises a plurality of first display units, the second region comprises a plurality of second display units, a transmission rate of the one of the plurality of first display units is higher than a transmission rate of the one of the plurality of second display units, and a luminance rate of the one of the plurality of first display units is lower than a luminance rate of the one of the plurality of second display units.

公开(公告)号：US20180233549A1

公开(公告)日：2018-08-16

申请号：US15920669

申请日：2018-03-14

Applicant: Boe Technology Group Co., Ltd.

Inventor： Libin LIU ,  Xiaowei Xu ,  Liangjian Li

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3246 ,  H01L27/32 ,  H01L27/3276 ,  H01L51/56 ,  H01L2227/323

Abstract: An organic light emitting display panel and manufacturing method thereof and a display device, which can reduce the critical dimension bias of the pixel defining layer and improve the display uniformity is disclosed. The organic light emitting display panel includes a pixel defining layer, which is provided with a plurality of light emitting material filling areas, a metal layer provided on the pixel defining layer; the metal layer is provided with openings corresponding to the light emitting material filling areas respectively. The display effect of the organic light emitting display device is thereby improved.

公开(公告)号：US09991322B2

公开(公告)日：2018-06-05

申请号：US15122887

申请日：2015-09-29

Applicant: Boe Technology Group Co., Ltd.

Inventor： Libin Liu ,  Xiaowei Xu ,  Liangjian Li

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3246 ,  H01L27/32 ,  H01L27/3276 ,  H01L51/56 ,  H01L2227/323

Abstract: The present invention discloses an organic light emitting display panel and manufacturing method thereof and a display device, which can reduce the critical dimension bias of the pixel defining layer and improve the display uniformity. The organic light emitting display panel provide by the present invention comprises: a pixel defining layer, which is provided with a plurality of light emitting material filling areas, being characterized by further comprising: a metal layer provided on the pixel defining layer; the metal layer is provided with openings corresponding to the light emitting material filling areas respectively. The solutions provided by the present invention are used to improve the display effect of the organic light emitting display device.