Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US14987217Application Date: 2016-01-04
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Publication No.: US10049983B2Publication Date: 2018-08-14
- Inventor: Cha-Hsin Chao , Chih-Hao Chen , Hsin-Yi Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/532 ; H01L23/528 ; H01L21/768 ; H01L21/311 ; H01L23/522
Abstract:
A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.
Public/Granted literature
- US20160118347A1 Semiconductor Device and Method Public/Granted day:2016-04-28
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