公开(公告)号：US10790124B2

公开(公告)日：2020-09-29

申请号：US15942841

申请日：2018-04-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu Chao Lin ,  Yuan-Ming Chiu ,  Ming-Ching Chang ,  Hsin-Yi Tsai ,  Chao-Cheng Chen

IPC分类号： H01J37/32 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/3065

摘要： A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.

公开(公告)号：US10049983B2

公开(公告)日：2018-08-14

申请号：US14987217

申请日：2016-01-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cha-Hsin Chao ,  Chih-Hao Chen ,  Hsin-Yi Tsai

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/311 ,  H01L23/522

摘要： A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.

公开(公告)号：US09230854B2

公开(公告)日：2016-01-05

申请号：US13963731

申请日：2013-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cha-Hsin Chao ,  Chih-Hao Chen ,  Hsin-Yi Tsai

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L21/311

CPC分类号： H01L23/53295 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.

摘要翻译： 提供了一种用于半导体器件的系统和方法。 一个实施例包括电介质层，电介质层上的硬掩模层和硬掩模层上的覆盖层。 执行多图案化工艺以形成使用覆盖层作为掩模的互连，以形成用于互连的开口。

公开(公告)号：US20180226235A1

公开(公告)日：2018-08-09

申请号：US15942841

申请日：2018-04-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu Chao Lin ,  Yuan-Ming Chiu ,  Ming-Ching Chang ,  Hsin-Yi Tsai ,  Chao-Cheng Chen

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/3065

CPC分类号： H01J37/32862 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67069

摘要： A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.

公开(公告)号：US20150325417A1

公开(公告)日：2015-11-12

申请号：US14273827

申请日：2014-05-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu Chao Lin ,  Yuan-Min Chiu ,  Ming-Ching Chang ,  Hsin-Yi Tsai ,  Chao-Cheng Chen

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/3213

CPC分类号： H01J37/32862 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67069

摘要： A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.

摘要翻译： 一种方法包括在干蚀刻室中形成涂层，将晶片放置在干蚀刻室中，蚀刻晶片的含金属层，并将晶片移出干蚀刻室。 在将晶片从干蚀刻室移出之后，去除涂层。

公开(公告)号：US09934945B2

公开(公告)日：2018-04-03

申请号：US15164509

申请日：2016-05-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu Chao Lin ,  Yuan-Ming Chiu ,  Ming-Ching Chang ,  Hsin-Yi Tsai ,  Chao-Cheng Chen

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01J37/32862 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67069

摘要： A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.

公开(公告)号：US20160118347A1

公开(公告)日：2016-04-28

申请号：US14987217

申请日：2016-01-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd

发明人： Cha-Hsin Chao ,  Chih-Hao Chen ,  Hsin-Yi Tsai

IPC分类号： H01L23/532 ,  H01L23/528 ,  H01L23/522

CPC分类号： H01L23/53295 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.

摘要翻译： 提供了一种用于半导体器件的系统和方法。 一个实施例包括电介质层，电介质层上的硬掩模层和硬掩模层上的覆盖层。 执行多图案化工艺以形成使用覆盖层作为掩模的互连，以形成用于互连的开口。

公开(公告)号：US20140300000A1

公开(公告)日：2014-10-09

申请号：US13963731

申请日：2013-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cha-Hsin Chao ,  Chih-Hao Chen ,  Hsin-Yi Tsai

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/53295 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.

摘要翻译： 提供了一种用于半导体器件的系统和方法。 一个实施例包括电介质层，电介质层上的硬掩模层和硬掩模层上的覆盖层。 执行多图案化工艺以形成使用覆盖层作为掩模的互连，以形成互连的开口。

公开(公告)号：US20160268106A1

公开(公告)日：2016-09-15

申请号：US15164509

申请日：2016-05-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu Chao Lin ,  Yuan-Ming Chiu ,  Ming-Ching Chang ,  Hsin-Yi Tsai ,  Chao-Cheng Chen

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01J37/32862 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67069

摘要： A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.

摘要翻译： 一种方法包括在干蚀刻室中形成涂层，将晶片放置在干蚀刻室中，蚀刻晶片的含金属层，并将晶片移出干蚀刻室。 在将晶片从干蚀刻室移出之后，去除涂层。

公开(公告)号：US09355823B2

公开(公告)日：2016-05-31

申请号：US14273827

申请日：2014-05-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu Chao Lin ,  Yuan-Min Chiu ,  Ming-Ching Chang ,  Hsin-Yi Tsai ,  Chao-Cheng Chen

IPC分类号： B44C1/22 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67

CPC分类号： H01J37/32862 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67069

摘要： A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.

摘要翻译： 一种方法包括在干蚀刻室中形成涂层，将晶片放置在干蚀刻室中，蚀刻晶片的含金属层，并将晶片移出干蚀刻室。 在将晶片从干蚀刻室移出之后，去除涂层。