Invention Grant
- Patent Title: Nitride semiconductor device
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Application No.: US15216691Application Date: 2016-07-21
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Publication No.: US10050138B2Publication Date: 2018-08-14
- Inventor: Daisuke Shibata , Kenichiro Tanaka , Masahiro Ishida , Shinichi Kohda
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-025356 20140213; JP2014-071476 20140331
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/417 ; H01L29/20 ; H01L29/861 ; H01L29/872 ; H01L29/205 ; H01L29/04 ; H01L29/423 ; H01L29/10
Abstract:
A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.
Public/Granted literature
- US20160329421A1 NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2016-11-10
Information query
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