公开(公告)号：US12292166B2

公开(公告)日：2025-05-06

申请号：US18252673

申请日：2021-10-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroshi Kitano ,  Takanori Aketa ,  Taisuke Nishimori ,  Kenichiro Tanaka

IPC: F21K9/64 ,  F21V1/04 ,  F21V33/00 ,  F21Y113/10 ,  F21Y115/30

Abstract: A lighting system includes a light source unit and a light-distributing member. The light source unit includes a laser light source. The light-distributing member has the function of reflecting incident light that has been emitted as a beam of light from the light source unit toward a target space. The light-distributing member transforms the incident light into lighting light having a different light distribution property from the incident light and distributes the lighting light over the target space.

公开(公告)号：US09595606B2

公开(公告)日：2017-03-14

申请号：US14790064

申请日：2015-07-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kenichiro Tanaka ,  Shinichi Kohda ,  Masahiro Ishida ,  Tetsuzo Ueda

IPC: H01L29/778 ,  H01L29/36 ,  H01L29/207 ,  H01L29/06 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7786

Abstract: A field-effect transistor includes a codoped layer made of AlxGa1-xN (0≦x≦1) and formed on a p-type Si substrate, a GaN layer formed on the codoped layer, and an AlGaN layer formed on the GaN layer. The codoped layer contains C and Si as impurity elements. The impurity concentration of C in the codoped layer is equal to or higher than 5×1017/cm3. The impurity concentration of Si in the codoped layer is lower than the impurity concentration of C. The impurity concentration of C in the GaN layer is equal to or lower than 1×1017/cm3. The thickness of the GaN layer is equal to or greater than 0.75 μm.

Abstract translation: 场效应晶体管包括由Al x Ga 1-x N（0≤x≤1）构成并形成在p型Si衬底上的共掺层，在共掺层上形成的GaN层和形成在GaN层上的AlGaN层。 共掺层含有C和Si作为杂质元素。 共掺层中的C的杂质浓度等于或高于5×1017 / cm3。 共掺层中Si的杂质浓度低于C的杂质浓度.Ca层中的C的杂质浓度等于或低于1×1017 / cm3。 GaN层的厚度等于或大于0.75μm。

公开(公告)号：US11852316B2

公开(公告)日：2023-12-26

申请号：US17915868

申请日：2021-03-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroshi Kitano ,  Kenichiro Tanaka ,  Takanori Aketa ,  Yoshiyuki Takegawa ,  Satoshi Hyodo

IPC: F21S8/02 ,  F21S2/00 ,  F21V7/05

CPC classification number: F21S8/026 ,  F21S2/00 ,  F21V7/05

Abstract: A construction component forms at least a part of a structure that faces a target space. The construction component has a first function, a second function, and a third function. The first function is a function of emitting illumination light toward the target space. The second function is a function of allowing incident light to enter the construction component. The incident light is emitted from a light source disposed out of a projection area, viewed from the target space, of the construction component and is incident on the construction component via a light transmission member. The third function is a function of converting the incident light into the illumination light.

公开(公告)号：US10050138B2

公开(公告)日：2018-08-14

申请号：US15216691

申请日：2016-07-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke Shibata ,  Kenichiro Tanaka ,  Masahiro Ishida ,  Shinichi Kohda

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/20 ,  H01L29/861 ,  H01L29/872 ,  H01L29/205 ,  H01L29/04 ,  H01L29/423 ,  H01L29/10

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.

公开(公告)号：US10312339B2

公开(公告)日：2019-06-04

申请号：US15728141

申请日：2017-10-09

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

公开(公告)号：US10281633B2

公开(公告)日：2019-05-07

申请号：US15977366

申请日：2018-05-11

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kenichiro Tanaka

IPC: F21V8/00 ,  F21S41/24 ,  F21S41/16 ,  G02B23/24 ,  F21S41/176 ,  F21W131/411 ,  F21W131/105 ,  F21Y115/30

Abstract: A light source device according to an embodiment includes a solid-state light source, and an optical transmission fiber. The optical transmission fiber includes a wavelength conversion core, a light guide core, and a clad, the wavelength conversion core absorbing excitation light to generate a population inversion state of electrons and including a wavelength conversion material emitting wavelength converted light in a visible light region, the light guide core covering a periphery of the wavelength conversion core and transmitting the wavelength converted light from a first end face side to a second end face side, and the clad covering a periphery of the light guide core. In the optical transmission fiber, the wavelength converted light propagating in the light guide core generates stimulated emission, and the excitation light and the wavelength converted light amplified by the stimulated emission are emitted from the second end face.

公开(公告)号：US09818835B2

公开(公告)日：2017-11-14

申请号：US15234775

申请日：2016-08-11

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/475 ,  H01L21/28 ,  H01L29/0619 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.