公开(公告)号：US09680001B2

公开(公告)日：2017-06-13

申请号：US14788791

申请日：2015-07-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke Shibata ,  Noboru Negoro

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/66 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/06 ,  H01L29/872 ,  H01L29/417

CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/872

Abstract: A nitride semiconductor device includes: a substrate; a buffer layer formed on the substrate; a laminated body formed by two or more cycles of semiconductor layers each including a first nitride semiconductor layer, and a second nitride semiconductor layer having a larger band gap than a band gap of the first nitride semiconductor layer, the first and second nitride semiconductor layers being laminated in this order on the buffer layer; a first electrode; and a second electrode. A channel layer is formed in each of the semiconductor layers at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer. A carrier concentration of the channel layer in the uppermost semiconductor layer is lower than a carrier concentration of each of the channel layers of the other semiconductor layers.

公开(公告)号：US09899506B2

公开(公告)日：2018-02-20

申请号：US15381120

申请日：2016-12-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masahiro Ogawa ,  Masahiro Ishida ,  Daisuke Shibata ,  Ryo Kajitani

IPC: H01L29/00 ,  H01L21/00 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/04 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/7787 ,  H01L21/02414 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7847

Abstract: Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (101), electron transit layer (103) that is disposed on substrate (101) and is formed by GaN; and electron supply layer (104) that is disposed on electron transit layer (103) and is formed by AlGaN. A coefficient of thermal expansion of substrate (101) is different between a first direction in a main surface of substrate (101) and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer (103).

公开(公告)号：US10050138B2

公开(公告)日：2018-08-14

申请号：US15216691

申请日：2016-07-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke Shibata ,  Kenichiro Tanaka ,  Masahiro Ishida ,  Shinichi Kohda

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/20 ,  H01L29/861 ,  H01L29/872 ,  H01L29/205 ,  H01L29/04 ,  H01L29/423 ,  H01L29/10

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.