Invention Grant
- Patent Title: Doped graphene
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Application No.: US15026437Application Date: 2014-09-26
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Publication No.: US10053772B2Publication Date: 2018-08-21
- Inventor: Saverio Russo , Monica Craciun , Thomas Hardisty Bointon
- Applicant: University of Exeter
- Applicant Address: GB Exeter
- Assignee: University of Exeter
- Current Assignee: University of Exeter
- Current Assignee Address: GB Exeter
- Agency: DeLio, Peterson & Curcio, LLC
- Agent Robert Curcio
- Priority: GB1317454.5 20131002
- International Application: PCT/GB2014/052913 WO 20140926
- International Announcement: WO2015/049490 WO 20150409
- Main IPC: C23C16/26
- IPC: C23C16/26 ; C01B32/194 ; C01B32/188 ; C01B32/186 ; H01B1/04 ; B82Y40/00

Abstract:
Methods of producing a uniformly or substantially uniformly doped relatively large area multi-layered graphene element are described comprising the steps of placing the graphene element and a dopant under low pressure conditions, and holding the graphene element and dopant at an elevated temperature for a period of time while under the low pressure conditions. In one arrangement, openings are formed in a multi-layered graphene element of relatively large area prior to doping. In another arrangement, a relatively large area multi-layered graphene element formed by an epitaxial growth technique is used. The invention also relates to an element produced using the aforementioned techniques.
Public/Granted literature
- US20160230273A1 DOPED GRAPHENE Public/Granted day:2016-08-11
Information query
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