发明授权
- 专利标题: Doped graphene
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申请号: US15026437申请日: 2014-09-26
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公开(公告)号: US10053772B2公开(公告)日: 2018-08-21
- 发明人: Saverio Russo , Monica Craciun , Thomas Hardisty Bointon
- 申请人: University of Exeter
- 申请人地址: GB Exeter
- 专利权人: University of Exeter
- 当前专利权人: University of Exeter
- 当前专利权人地址: GB Exeter
- 代理机构: DeLio, Peterson & Curcio, LLC
- 代理商 Robert Curcio
- 优先权: GB1317454.5 20131002
- 国际申请: PCT/GB2014/052913 WO 20140926
- 国际公布: WO2015/049490 WO 20150409
- 主分类号: C23C16/26
- IPC分类号: C23C16/26 ; C01B32/194 ; C01B32/188 ; C01B32/186 ; H01B1/04 ; B82Y40/00
摘要:
Methods of producing a uniformly or substantially uniformly doped relatively large area multi-layered graphene element are described comprising the steps of placing the graphene element and a dopant under low pressure conditions, and holding the graphene element and dopant at an elevated temperature for a period of time while under the low pressure conditions. In one arrangement, openings are formed in a multi-layered graphene element of relatively large area prior to doping. In another arrangement, a relatively large area multi-layered graphene element formed by an epitaxial growth technique is used. The invention also relates to an element produced using the aforementioned techniques.
公开/授权文献
- US20160230273A1 DOPED GRAPHENE 公开/授权日:2016-08-11
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