公开(公告)号：US10053772B2

公开(公告)日：2018-08-21

申请号：US15026437

申请日：2014-09-26

申请人： University of Exeter

发明人： Saverio Russo ,  Monica Craciun ,  Thomas Hardisty Bointon

IPC分类号： C23C16/26 ,  C01B32/194 ,  C01B32/188 ,  C01B32/186 ,  H01B1/04 ,  B82Y40/00

CPC分类号： C23C16/26 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/188 ,  C01B32/194 ,  H01B1/04

摘要： Methods of producing a uniformly or substantially uniformly doped relatively large area multi-layered graphene element are described comprising the steps of placing the graphene element and a dopant under low pressure conditions, and holding the graphene element and dopant at an elevated temperature for a period of time while under the low pressure conditions. In one arrangement, openings are formed in a multi-layered graphene element of relatively large area prior to doping. In another arrangement, a relatively large area multi-layered graphene element formed by an epitaxial growth technique is used. The invention also relates to an element produced using the aforementioned techniques.

公开(公告)号：US20180170759A1

公开(公告)日：2018-06-21

申请号：US15578953

申请日：2016-06-02

申请人： University of Exeter

发明人： Thomas Hardisty Bointon ,  Matthew D. Barnes ,  Saverio Russo ,  Monica Craciun

IPC分类号： C01B32/186 ,  C01B32/194 ,  C30B25/18 ,  C30B29/02 ,  C30B29/64 ,  G06F3/044

CPC分类号： C01B32/186 ,  C01B32/194 ,  C01B2204/02 ,  C30B25/186 ,  C30B29/02 ,  C30B29/64 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103

摘要： A method for use in the synthesis of graphene is described that comprises the steps of annealing a substrate in a hydrogen gas atmosphere, subsequently undertaking a deposition and nucleation step in which a relatively thick carbon layer is deposited onto the substrate and subsequently thinned to form small graphene islands or nuclei, undertaking a graphene growth step in which the graphene islands or nuclei expand and coalesce, and subsequently allowing the substrate to cool. A sensor 10 incorporating the graphene sheet is also described.

公开(公告)号：US20160230273A1

公开(公告)日：2016-08-11

申请号：US15026437

申请日：2014-09-26

申请人： University of Exeter

发明人： Saverio Russo ,  Monica Craciun ,  Thomas Hardisty Bointon

IPC分类号： C23C16/26 ,  H01B1/04

CPC分类号： C23C16/26 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/188 ,  C01B32/194 ,  H01B1/04

摘要： Methods of producing a uniformly or substantially uniformly doped relatively large area multi-layered graphene element are described comprising the steps of placing the graphene element and a dopant under low pressure conditions, and holding the graphene element and dopant at an elevated temperature for a period of time whilst under the low pressure conditions. In one arrangement, openings are formed in a multi-layered graphene element of relatively large area prior to doping. In another arrangement, a relatively large area multi-layered graphene element formed by an epitaxial growth technique is used. The invention also relates to an element produced using the aforementioned techniques.

摘要翻译： 描述了生产均匀或基本均匀掺杂的相对较大面积的多层石墨烯元件的方法，包括以下步骤：在低压条件下放置石墨烯元件和掺杂剂，并将石墨烯元素和掺杂剂保持在高温下一段时间 时间在低压条件下。 在一种布置中，在掺杂之前，在相对较大面积的多层石墨烯元件中形成开口。 在另一种布置中，使用通过外延生长技术形成的相对大面积的多层石墨烯元件。 本发明还涉及使用上述技术制造的元件。