Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15853875Application Date: 2017-12-25
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Publication No.: US10056493B2Publication Date: 2018-08-21
- Inventor: Zhibiao Zhou , Ding-Lung Chen , Chen-Bin Lin , Sanpo Wang , Chung-Yuan Lee , Chi-Fa Ku
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105115666A 20160520
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L29/788 ; H01L29/792
Abstract:
A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the oxide-semiconductor layer.
Public/Granted literature
- US20180138316A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-05-17
Information query
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