公开(公告)号：US09806085B1

公开(公告)日：2017-10-31

申请号：US15221618

申请日：2016-07-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sanpo Wang

IPC: H01L23/48 ,  H01L27/11517 ,  H01L29/49 ,  H01L27/11563 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/4958 ,  H01L29/7869 ,  H01L29/7881 ,  H01L29/792

Abstract: The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device includes a first insulating layer, a source and a drain, a stacked structure, a second insulating layer, and a gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed on the first insulating layer, and the stacked structure is also disposed on the first insulating layer, between the source and the drain. The stacked structure includes a charge storage layer and an oxide semiconductor (OS) layer disposed on the charge storage layer. The second insulating layer covers the source, the drain and the OS layer. The gate is disposed on the second insulating layer.

公开(公告)号：US09887293B2

公开(公告)日：2018-02-06

申请号：US15191542

申请日：2016-06-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Ding-Lung Chen ,  Chen-Bin Lin ,  Sanpo Wang ,  Chung-Yuan Lee ,  Chi-Fa Ku

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/792 ,  H01L29/788

CPC classification number: H01L29/78609 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a dielectric layer, a first gate electrode, a second gate electrode and a charge storage structure. The oxide-semiconductor layer is disposed on the first gate electrode on the substrate. The source/drain regions are disposed on the oxide-semiconductor layer. The first dielectric layer covers on the oxide-semiconductor layer and source/drain regions. A second gate electrode is disposed between source/drain regions and partially covers the oxide-semiconductor layer. The oxide-semiconductor layer may be optionally disposed between the first gate electrode and the oxide-semiconductor layer or be disposed on the second gate electrode.

公开(公告)号：US10056493B2

公开(公告)日：2018-08-21

申请号：US15853875

申请日：2017-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Ding-Lung Chen ,  Chen-Bin Lin ,  Sanpo Wang ,  Chung-Yuan Lee ,  Chi-Fa Ku

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L29/78609 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the oxide-semiconductor layer.