- 专利标题： Interposer structures, semiconductor assembly and methods for forming interposer structures
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申请号： US15475219申请日： 2017-03-31
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公开(公告)号： US10056528B1公开(公告)日： 2018-08-21
- 发明人: Zhiguo Qian , Kemal Aygun
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： 2SPL Patentanwälte PartG mbB
- 代理商 Mani Arabi
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L23/04 ; H01L33/38 ; H01L23/498 ; H01L25/07 ; H01L23/538 ; H01L21/48
摘要：
An interposer structure includes a plurality of front side contact interface structures for connecting the interposer structure to at least one other structure. Additionally, the interposer structure includes a plurality of back side contact interface structures for connecting the interposer structure to at least one other structure. Further, the interposer structure includes a first through substrate via and an electrically conductive shielding structure. The electrically conductive shielding structure ends before reaching a back side of the interposer substrate die and the first through substrate via is connected to the electrically conductive shielding structure at a front side of the interposer substrate die.
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