- 专利标题: Micropowder and method for manufacturing the same
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申请号: US15386749申请日: 2016-12-21
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公开(公告)号: US10059631B2公开(公告)日: 2018-08-28
- 发明人: Ta-Ching Hsiao , Wen-Po Tu , Chu-Pi Jeng , Mu-Hsi Sung
- 申请人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 申请人地址: TW Hsinchu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsinchu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: TW105137205A 20161115
- 主分类号: C04B35/573
- IPC分类号: C04B35/573 ; C04B35/628 ; C04B35/626 ; C01B31/36 ; C30B23/00 ; C30B29/36
摘要:
A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.
公开/授权文献
- US20180134625A1 MICROPOWDER AND METHOD FOR MANUFACTURING THE SAME 公开/授权日:2018-05-17
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