Invention Grant
- Patent Title: Memory controller, storage device including the same and data encoding and decoding methods thereof
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Application No.: US14580815Application Date: 2014-12-23
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Publication No.: US10061641B2Publication Date: 2018-08-28
- Inventor: Namshik Kim , Tae-Hwan Kim , Daewook Kim , Biwoong Chung , Junjin Kong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0161731 20131223
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52 ; G11C11/419
Abstract:
A storage device is provided which includes an ECC circuit. At a write operation, the ECC circuit generates a CRC (cyclic redundancy check) parity corresponding to data and generates an ECC (error correction code) parity corresponding to the data using an error correction code. At a read operation about the data stored in the at least one nonvolatile memory device, the ECC circuit corrects an error of the data using the CRC parity and the ECC parity.
Public/Granted literature
- US20150178155A1 MEMORY CONTROLLER, STORAGE DEVICE INCLUDING THE SAME AND DATA ENCODING AND DECODING METHODS THEREOF Public/Granted day:2015-06-25
Information query
