Invention Grant
- Patent Title: Copper alloy sputtering target and manufacturing method of copper alloy sputtering target
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Application No.: US14333812Application Date: 2014-07-17
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Publication No.: US10062552B2Publication Date: 2018-08-28
- Inventor: Satoru Mori , Toshio Sakamoto , Kiyoyuki Ookubo
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2013-159962 20130731; JP2014-121527 20140612
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; B22D7/00 ; B22D11/108 ; B22D11/00 ; C22C1/02 ; C22C9/00 ; C22F1/08

Abstract:
A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.
Public/Granted literature
- US20150034482A1 COPPER ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD OF COPPER ALLOY SPUTTERING TARGET Public/Granted day:2015-02-05
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