Invention Grant
- Patent Title: Method and apparatus for selectively forming nitride caps on metal gate
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Application No.: US14723199Application Date: 2015-05-27
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Publication No.: US10062763B2Publication Date: 2018-08-28
- Inventor: Junjing Bao , Haining Yang , Yanxiang Liu , Jeffrey Junhao Xu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: MG-IP Law, P.C
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/40 ; H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L29/49 ; H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L21/288 ; H01L21/3105 ; H01L21/3213 ; H01L27/088 ; H01L29/417
Abstract:
A sacrificial cap is grown on an upper surface of a conductor. A dielectric spacer is against a side of the conductor. An upper dielectric side spacer is formed on a sidewall of the sacrificial cap. The sacrificial cap is selectively etched, leaving a cap recess, and the upper dielectric side spacer facing the cap recess. Silicon nitride is filled in the cap recess, to form a center cap and a protective cap having center cap and the upper dielectric spacer.
Public/Granted literature
- US20160351677A1 METHOD AND APPARATUS FOR SELECTIVELY FORMING NITRIDE CAPS ON METAL GATE Public/Granted day:2016-12-01
Information query
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