Invention Grant
- Patent Title: Ebeam three beam aperture array
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Application No.: US15873782Application Date: 2018-01-17
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Publication No.: US10067416B2Publication Date: 2018-09-04
- Inventor: Yan A. Borodovsky , Donald W. Nelson , Mark C. Phillips
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G03F1/20
- IPC: G03F1/20 ; G03F7/20 ; H01J37/30 ; H01L21/768 ; H01J37/317 ; H01J37/302 ; H01J37/04
Abstract:
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.
Public/Granted literature
- US20180143526A1 EBEAM THREE BEAM APERTURE ARRAY Public/Granted day:2018-05-24
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