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12 条记录 (耗时 0.019 秒)

    Ebeam universal cutter
    1.
    发明授权
    Ebeam universal cutter 有权

    公开(公告)号：US10578970B2

    公开(公告)日：2020-03-03

    申请号：US16252427

    申请日：2019-01-18

    申请人： Intel Corporation

    发明人： Yan A. Borodovsky ,  Donald W. Nelson ,  Mark C. Phillips

    IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/311 ,  H01J37/302 ,  H01J37/317 ,  H01J37/04

    摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

    Aperture size modulation to enhance ebeam patterning resolution
    4.
    发明授权
    Aperture size modulation to enhance ebeam patterning resolution 有权

    公开(公告)号：US10395883B2

    公开(公告)日：2019-08-27

    申请号：US16069708

    申请日：2016-03-31

    申请人： Intel Corporation

    发明人： Shakul Tandon ,  Mark C. Phillips ,  Gabriele Canzi

    IPC分类号： H01J37/20 ,  H01J37/04 ,  H01J37/147 ,  H01J37/317 ,  H01J37/302 ,  H01L21/027 ,  H01L21/768

    摘要： Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. Each opening of the first column of openings has a dimension in the first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. Each opening of the second column of openings has the dimension in the first direction. A scan direction of the BAA is along a second direction orthogonal to the first direction. The openings of the first column of openings overlap with the openings of the second column of openings by at least 5% but less than 50% of the dimension in the first direction when scanned along the second direction.

    Fill pattern to enhance ebeam process margin
    6.
    发明授权
    Fill pattern to enhance ebeam process margin 有权

    公开(公告)号：US11581162B2

    公开(公告)日：2023-02-14

    申请号：US17388945

    申请日：2021-07-29

    申请人： Intel Corporation

    发明人： Shakul Tandon ,  Mark C. Phillips ,  Shem O. Ogadhoh ,  John A. Swanson

    IPC分类号： H01J37/30 ,  H01J37/317 ,  H01L21/027 ,  H01J37/04 ,  H01L21/033

    摘要： Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

    Ebeam universal cutter
    7.
    发明授权
    Ebeam universal cutter 有权

    公开(公告)号：US10216087B2

    公开(公告)日：2019-02-26

    申请号：US15122622

    申请日：2014-12-19

    申请人： Intel Corporation

    发明人： Yan A. Borodovsky ,  Donald W. Nelson ,  Mark C. Phillips

    IPC分类号： G03F7/20 ,  H01L21/027 ,  H01J37/317 ,  H01L21/311

    摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

    Fill pattern to enhance e-beam process margin
    8.
    发明授权
    Fill pattern to enhance e-beam process margin 有权

    公开(公告)号：US11107658B2

    公开(公告)日：2021-08-31

    申请号：US16323128

    申请日：2016-09-30

    申请人： Intel Corporation

    发明人： Shakul Tandon ,  Mark C. Phillips ,  Shem O. Ogadhoh ,  John A. Swanson

    IPC分类号： H01J37/317 ,  H01L21/033 ,  H01J37/30 ,  H01L21/027 ,  H01J37/04

    摘要： Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

    Ebeam align on the fly
    10.
    发明授权
    Ebeam align on the fly 有权

    公开(公告)号：US10290528B2

    公开(公告)日：2019-05-14

    申请号：US15122792

    申请日：2014-12-22

    申请人： Intel Corporation

    发明人： Yan A. Borodovsky ,  Donald W. Nelson ,  Mark C. Phillips

    IPC分类号： G03F9/00 ,  H01L21/68 ,  H01L21/027 ,  H01J37/317 ,  H01L21/311

    摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of real-time alignment of a wafer situated on a stage of an e-beam tool involves collecting backscattered electrons from an underlying patterned feature of the wafer while an e-beam column of the e-beam tool writes during scanning of the stage. The collecting is performed by an electron detector placed at the e-beam column bottom. The method also involves performing linear corrections of an alignment of the stage relative to the e-beam column based on the collecting.