Invention Grant
- Patent Title: Dechuck control method and plasma processing apparatus
-
Application No.: US13719509Application Date: 2012-12-19
-
Publication No.: US10069443B2Publication Date: 2018-09-04
- Inventor: Shigeru Senzaki , Shunichi Mikami , Toshikatsu Tobana
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2011-278415 20111220; JP2012-182706 20120821
- Main IPC: H02N13/00
- IPC: H02N13/00 ; C23F1/08 ; H01L21/683 ; H01J37/32

Abstract:
A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.
Public/Granted literature
- US20130153147A1 DECHUCK CONTROL METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2013-06-20
Information query