公开(公告)号：US20130153147A1

公开(公告)日：2013-06-20

申请号：US13719509

申请日：2012-12-19

Applicant: Tokyo Electron Limited

Inventor： Shigeru SENZAKI ,  Shunichi Mikami ,  Toshikatsu Tobana

IPC: H02N13/00 ,  C23F1/08

CPC classification number: H02N13/00 ,  C23F1/08 ,  H01J37/32715 ,  H01L21/6831

Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

Abstract translation: 脱壳控制方法包括通过将惰性气体引入处理室并将处理室内的压力保持在第一压力下进行排放处理; 监测供给到处理对象背面的传热气体的压力和/或透热气体的泄漏流量; 获得静电卡盘表面的剩余电荷的量和极性，并且向卡盘电极施加用于将与剩余电荷相同量但与极性相反的电荷提供的电压; 在对所述卡盘电极施加电压并将所述处理室内的压力降低到第二压力的同时，从所述处理室排出所述惰性气体; 并且关闭施加到静电卡盘的电压并从静电卡盘去除处理对象物。

公开(公告)号：US10290510B2

公开(公告)日：2019-05-14

申请号：US15090971

申请日：2016-04-05

Applicant: Tokyo Electron Limited

Inventor： Shunichi Mikami

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/311 ,  H01C17/00 ,  H01C17/24

Abstract: A plasma etching method is performed by forming a desired pattern of a mask into a film including a zirconium oxide film by plasma etching with plasma generated from a first gas. The first gas consists of at least one chloride-containing gas of the group of boron trichloride, tetrachloromethane, chloride and silicon tetrachloride, at least one hydrogen-containing gas of the group of hydrogen bromide, hydrogen and methane, and a noble gas. An underlying film of a silicon oxide film or an amorphous carbon film is provided underneath the zirconium oxide film, and an etching selectivity of the zirconium oxide film to the underlying film is greater than or equal to one.

公开(公告)号：US10069443B2

公开(公告)日：2018-09-04

申请号：US13719509

申请日：2012-12-19

Applicant: Tokyo Electron Limited

Inventor： Shigeru Senzaki ,  Shunichi Mikami ,  Toshikatsu Tobana

IPC: H02N13/00 ,  C23F1/08 ,  H01L21/683 ,  H01J37/32

Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

公开(公告)号：US10283368B2

公开(公告)日：2019-05-07

申请号：US15063669

申请日：2016-03-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shunichi Mikami

IPC: H01L21/311 ,  H01L21/683 ,  H01L21/027

Abstract: There is provided a plasma etching method for etching a base film by a plasma using a photoresist as a mask. The method includes etching the base film by the plasma, under a first processing condition in which a selectivity of the photoresist to the base film is set to a first selectivity, while using as a mask the photoresist formed in a predetermined pattern by exposure and development and a scum remaining in the photoresist, without performing a process of removing the scum; and switching, during the etching of the base film, the first processing condition to a second processing condition in which the selectivity of the photoresist to the base film is set to a second selectivity lower than the first selectivity and further etching the base film by a plasma while using the photoresist as a mask under the second processing condition.

公开(公告)号：US09653321B2

公开(公告)日：2017-05-16

申请号：US14507882

申请日：2014-10-07

Applicant: Tokyo Electron Limited

Inventor： Shunichi Mikami

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/32139 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137

Abstract: A plasma processing method for processing a silicon containing film formed on a substrate including a step of removing a reaction product with a first plasma formed from a first gas containing halogen, hydrogen, and carbon in a case where the reaction product is formed when performing an etching process on the silicon containing film by using an etching mask having an etching pattern.

公开(公告)号：US09147556B2

公开(公告)日：2015-09-29

申请号：US14244428

申请日：2014-04-03

Applicant: Tokyo Electron Limited

Inventor： Shunichi Mikami

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32082 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/31116 ,  H01L21/31144

Abstract: A plasma processing method includes an etching process of etching an insulating film formed on a processing target object in a chamber by plasma of a first fluorine-containing gas with a TiN film having a preset pattern as a mask; a modifying process of modifying, between a carbon-containing film and a Ti-containing film adhering to a component within the chamber, a surface of the Ti-containing film by plasma of an oxygen-containing gas while removing the carbon-containing film by the plasma of the oxygen-containing gas, after the etching process; a first removing process of removing a TiO film, which is obtained by modifying the surface of the Ti-containing film, by plasma of a second fluorine-containing gas; and a second removing process of removing a residual film of the Ti-containing film, which is exposed by removing the TiO film, from the component within the chamber by plasma of a chlorine-containing gas.

Abstract translation: 等离子体处理方法包括：利用具有预定图案的TiN膜作为掩模的第一含氟气体的等离子体蚀刻在室内的处理对象物上形成的绝缘膜的蚀刻工艺; 在通过含氧气体的等离子体在含碳膜与含有室内的成分的Ti的膜之间改变含Ti的膜的表面，同时通过 经过蚀刻处理后的含氧气体的等离子体; 通过第二含氟气体的等离子体来除去通过改性含Ti膜的表面获得的TiO膜的第一除去工艺; 以及通过含氯气体的等离子体从室内的组分除去通过除去TiO膜而暴露的含Ti膜的残留膜的第二除去过程。