公开(公告)号：US11062882B2

公开(公告)日：2021-07-13

申请号：US16743788

申请日：2020-01-15

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Shinya Morikita ,  Toshikatsu Tobana ,  Fumiya Takata

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.

公开(公告)号：US10069443B2

公开(公告)日：2018-09-04

申请号：US13719509

申请日：2012-12-19

Applicant: Tokyo Electron Limited

Inventor： Shigeru Senzaki ,  Shunichi Mikami ,  Toshikatsu Tobana

IPC: H02N13/00 ,  C23F1/08 ,  H01L21/683 ,  H01J37/32

Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

公开(公告)号：US11251048B2

公开(公告)日：2022-02-15

申请号：US16896304

申请日：2020-06-09

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Toshikatsu Tobana ,  Fumiya Takata ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  H05H1/24 ,  C23C16/44

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

公开(公告)号：US11081351B2

公开(公告)日：2021-08-03

申请号：US16989810

申请日：2020-08-10

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Toshikatsu Tobana ,  Shinya Morikita ,  Satoru Nakamura

IPC: H01L21/027 ,  H01J37/32

Abstract: A disclosed method of processing a substrate includes (a) providing a substrate in a chamber of a plasma processing apparatus. The substrate has a patterned organic mask. The method further includes (b) generating plasma from a processing gas in the chamber in a state where the substrate is accommodated in the chamber. The method further includes (c) periodically applying a pulsed negative direct-current voltage to an upper electrode of the plasma processing apparatus, during execution of the generating plasma (that is, the above (b)). In the applying a pulsed negative direct-current voltage, ions from the plasma are supplied to the upper electrode, so that a silicon-containing material which is released from the upper electrode is deposited on the substrate.

公开(公告)号：US09911621B2

公开(公告)日：2018-03-06

申请号：US15117052

申请日：2015-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshikatsu Tobana ,  Gen You ,  Soichiro Okada

IPC: H01L21/311 ,  H01L21/683 ,  H01L21/02

CPC classification number: H01L21/31138 ,  H01L21/02118 ,  H01L21/31144 ,  H01L21/6831

Abstract: This method for processing a target object includes steps ST1 to ST4. The target object has an organic polymer layer and a resist mask on a substrate. In step ST1, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST2, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST3, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step 4, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.

公开(公告)号：US11594398B2

公开(公告)日：2023-02-28

申请号：US16790028

申请日：2020-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Aoki ,  Fumiya Takata ,  Toshikatsu Tobana ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  B08B5/00

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

公开(公告)号：US11569094B2

公开(公告)日：2023-01-31

申请号：US17190651

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Kota Ishiharada ,  Fumiya Takata ,  Toshikatsu Tobana ,  Shinya Morikita

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.

公开(公告)号：US20130153147A1

公开(公告)日：2013-06-20

申请号：US13719509

申请日：2012-12-19

Applicant: Tokyo Electron Limited

Inventor： Shigeru SENZAKI ,  Shunichi Mikami ,  Toshikatsu Tobana

IPC: H02N13/00 ,  C23F1/08

CPC classification number: H02N13/00 ,  C23F1/08 ,  H01J37/32715 ,  H01L21/6831

Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

Abstract translation: 脱壳控制方法包括通过将惰性气体引入处理室并将处理室内的压力保持在第一压力下进行排放处理; 监测供给到处理对象背面的传热气体的压力和/或透热气体的泄漏流量; 获得静电卡盘表面的剩余电荷的量和极性，并且向卡盘电极施加用于将与剩余电荷相同量但与极性相反的电荷提供的电压; 在对所述卡盘电极施加电压并将所述处理室内的压力降低到第二压力的同时，从所述处理室排出所述惰性气体; 并且关闭施加到静电卡盘的电压并从静电卡盘去除处理对象物。