Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing the same
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Application No.: US15671275Application Date: 2017-08-08
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Publication No.: US10074773B2Publication Date: 2018-09-11
- Inventor: Jae In Sim , Ju Heon Yoon , Gi Bum Kim , Ji Hye Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0003578 20170110
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L33/22 ; H01L21/02 ; H01L33/00 ; H01L33/38 ; H01L33/42

Abstract:
A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.
Public/Granted literature
- US20180198025A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-07-12
Information query
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