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公开(公告)号：US09070835B2
公开(公告)日：2015-06-30
申请号：US14146689
申请日：2014-01-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju Heon Yoon , Sang Yeon Kim , Seung Hwan Lee , Jin Hyun Lee , Wan Tae Lim , Hyun Kwon Hong
CPC classification number: H01L33/382 , H01L33/20 , H01L33/22 , H01L33/40 , H01L33/44 , H01L2224/13 , H01L2933/0016
Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.
Abstract translation: 一种半导体发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 连接到第一导电类型半导体层的第一电极; 第二电极，包括连接到第二导电类型半导体层的接触层，设置在接触层上的覆盖层和设置在覆盖层上的金属缓冲层，金属缓冲层包围覆盖层的上表面和侧表面 ; 设置在所述发光结构上以使得所述第一和第二电极露出的第一绝缘层; 以及设置在所述第一绝缘层上的第二绝缘层，使得所述第一电极的至少一部分和所述金属缓冲层的至少一部分露出。
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公开(公告)号：US10686101B2
公开(公告)日：2020-06-16
申请号：US16028969
申请日：2018-07-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju Heon Yoon , Ha Yeong Son , Young Sub Shin
Abstract: Provided is a semiconductor light emitting device which includes: a light emitting structure including a plurality of semiconductor layers and configured to generate and emit light to an outside of the light emitting structure; a transparent electrode layer disposed on the light emitting structure; a transparent protective layer disposed on the transparent electrode layer; a distributed Bragg reflector (DBR) layer disposed on the transparent protective layer and covering at least a part of the transparent electrode layer; and at least one electrode pad connected to the transparent electrode layer through a hole or via.
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公开(公告)号：US10074773B2
公开(公告)日：2018-09-11
申请号：US15671275
申请日：2017-08-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae In Sim , Ju Heon Yoon , Gi Bum Kim , Ji Hye Lee
CPC classification number: H01L33/22 , H01L21/0237 , H01L21/0243 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02521 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L33/007 , H01L33/38 , H01L33/42 , H01L33/486 , H01L33/60 , H01L2224/0401 , H01L2224/05001 , H01L2224/13101 , H01L2224/16245 , H01L2933/0016 , H01L2924/014 , H01L2924/00014
Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.
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公开(公告)号：US10756238B2
公开(公告)日：2020-08-25
申请号：US16234800
申请日：2018-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ju Heon Yoon , Gi Bum Kim
Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer, and a reflective electrode structure on the transparent electrode layer that includes a light-transmitting insulating layer on the transparent electrode layer with insulating patterns, portions of sides of the insulating patterns being open, and a contact region of the transparent electrode layer being defined by a region between the insulating patterns, air gaps between the transparent electrode layer and the insulating patterns, the air gaps extending in the open portions of the sides of the insulating patterns, and a reflective electrode layer on the insulating patterns to cover the open portions of the insulating patterns, the reflective electrode layer being connected to the contact region of the transparent electrode layer.
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公开(公告)号：US09466765B1
公开(公告)日：2016-10-11
申请号：US15056124
申请日：2016-02-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju Heon Yoon , Yeon Ji Kim , Yong Seok Kim , Tae Kang Kim , Tae Hun Kim
CPC classification number: H01L33/22 , H01L21/02068 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01L2933/0091
Abstract: A method of manufacturing a semiconductor light emitting device includes stacking a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; forming a first electrode and a second electrode on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; forming an insulating layer covering the first and second electrodes and having first and second openings partially exposing surfaces of the first and second electrodes, respectively; and performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer and form an oxygen-depleted layer on the partially exposed surfaces of the first and second electrodes.
Abstract translation: 一种制造半导体发光器件的方法包括在衬底上堆叠包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 在第一导电类型半导体层和第二导电类型半导体层上分别形成第一电极和第二电极; 形成覆盖所述第一和第二电极并且分别具有部分地暴露所述第一和第二电极的表面的第一和第二开口的绝缘层; 以及在所述绝缘层的表面和所述第一和第二电极的部分露出的表面上进行等离子体处理，以在所述绝缘层的表面上形成凹凸部，并在所述第一和第二电极的所述部分露出的表面上形成氧耗尽层 和第二电极。
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Patent Agency Ranking
6.发明授权公开(公告)号：US10811568B2
公开(公告)日：2020-10-20
申请号：US16181592
申请日：2018-11-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae Hun Kim , Jae In Sim , Ju Heon Yoon
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer including a recessed region and a protruding region, an active layer and a second conductivity-type semiconductor layer on the protruding region, a reflective electrode layer disposed on the second conductivity-type semiconductor layer, an insulating layer including a first opening disposed on a contact region of the first conductivity-type semiconductor layer and a second opening disposed on a contact region of the reflective electrode layer, a first conductive pattern disposed on the insulating layer, and extending into the first opening to be electrically connected to the contact region of the first conductivity-type semiconductor layer, a second conductive pattern disposed on the insulating layer, and extending into the second opening to be electrically connected to the reflective electrode layer, and a multilayer insulating structure covering the first and second conductive patterns.
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7.发明授权Semiconductor light emitting device and semiconductor light emitting device package using the same 有权半导体发光器件和使用其的半导体发光器件封装公开(公告)号：US09406635B2
公开(公告)日：2016-08-02
申请号：US14693749
申请日：2015-04-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju Heon Yoon , Yong Il Kim , Myong Soo Cho
CPC classification number: H01L24/16 , H01L24/05 , H01L24/13 , H01L33/44 , H01L33/62 , H01L2224/02125 , H01L2224/0401 , H01L2224/05551 , H01L2224/05552 , H01L2224/05557 , H01L2224/05567 , H01L2224/05572 , H01L2224/13022 , H01L2224/13027 , H01L2224/13111 , H01L2224/1607 , H01L2224/16106 , H01L2224/16258 , H01L2924/3512 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/014
Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.
Abstract translation: 半导体发光器件包括多区域焊盘。 半导体发光器件包括具有第一表面和第二表面的发光二极管（LED）芯片，第一表面设置有第一和第二电极以及与第一表面相对的第二表面。 钝化层设置在LED芯片的表面上，使得第一和第二电极的接合区域通过钝化层露出。 在每个相应的接合区域中设置有焊盘，并且具有多个分离的区域。 焊料凸块设置在每个相应的接合区域中并且覆盖相应焊垫的多个分离区域。 在半导体发光器件中，通过确保焊盘和焊料凸块之间的界面不被完全损坏，从而可以有效地防止焊盘和焊料凸点之间的分离。
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公开(公告)号：US10573786B2
公开(公告)日：2020-02-25
申请号：US16055651
申请日：2018-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ju Heon Yoon , Tae Hun Kim , Jae In Sim
Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.
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公开(公告)号：US10541350B2
公开(公告)日：2020-01-21
申请号：US15985236
申请日：2018-05-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju Heon Yoon , Jae In Sim , Tae Hun Kim , Gi Bum Kim
Abstract: A light-emitting device includes a light-emitting chip having a first surface and a second surface. A first light reflection pattern is formed on the second surface. A plurality of terminals are disposed to be connected to the light-emitting chip by passing through the first light reflection pattern. A second light reflection pattern is formed on side surfaces of the light-emitting chip and the first light reflection pattern. A light-transmitting pattern is formed between the light-emitting chip and the second light reflection pattern and extends between the first light reflection pattern and the second light reflection pattern. A wavelength conversion layer is formed on the first surface of the light-emitting chip.
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10.发明授权公开(公告)号：US09653515B2
公开(公告)日：2017-05-16
申请号：US14454742
申请日：2014-08-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ju Heon Yoon , Myeong Ha Kim
CPC classification number: H01L27/15 , H01L33/38 , H01L2224/48247 , H01L2224/48257
Abstract: A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.
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