Invention Grant
- Patent Title: Multiple patterning method for semiconductor devices
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Application No.: US15179754Application Date: 2016-06-10
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Publication No.: US10078718B2Publication Date: 2018-09-18
- Inventor: Ken-Hsien Hsieh , Chih-Ming Lai , Ru-Gun Liu , Wen-Chun Huang , Wen-Li Cheng , Pai-Wei Wan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/36 ; G03F1/70

Abstract:
Disclosed is a method of fabricating an integrated circuit (IC) using a multiple (N>2) patterning technique. The method provides a layout of the IC having a set of IC features. The method further includes deriving a graph from the layout, the graph having vertices connected by edges, the vertices representing the IC features, and the edges representing spacing between the IC features. The method further includes selecting vertices, wherein the selected vertices are not directly connected by an edge, and share at least one neighboring vertex that is connected by N edges. The method further includes using a computerized IC tool to merge the selected vertices, thereby reducing a number of edges connecting the neighboring vertex to be below N. The method further includes removing a portion of the vertices that are connected by less than N edges.
Public/Granted literature
- US20170193147A1 Multiple Patterning Method for Semiconductor Devices Public/Granted day:2017-07-06
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