Invention Grant
- Patent Title: Integrated circuit device and method of fabricating the same
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Application No.: US15186825Application Date: 2016-06-20
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Publication No.: US10079210B2Publication Date: 2018-09-18
- Inventor: Do-sun Lee , Do-hyun Lee , Chul-sung Kim , Sang-jin Hyun , Joon-gon Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electroics Co., Ltd.
- Current Assignee: Samsung Electroics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0142165 20151012
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/535 ; H01L27/088 ; H01L29/06 ; H01L29/417 ; H01L29/78

Abstract:
An integrated circuit device including a substrate having at least one fin-shaped active region, the at least one fin-shaped active region extending in a first direction, a gate line extending on the at least one fin-shaped active region in a second direction, the second direction intersecting with the first direction, a conductive region on a portion of the at least one fin-shaped active region at one side of the gate line, and a contact plug extending from the conductive region in a third direction, the third direction being perpendicular to a main plane of the substrate, may be provided. The contact plug may include a metal plug, a conductive barrier film on the conductive region, the conductive barrier film surrounding a sidewall and a bottom surface of the metal plug, the conductive barrier film including an N-rich metal nitride film, and a metal silicide film between the conductive region and the conductive barrier film.
Public/Granted literature
- US20170103948A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-04-13
Information query
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