- 专利标题： Semiconductor devices and methods for forming a semiconductor device
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申请号： US15434208申请日： 2017-02-16
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公开(公告)号： US10079281B2公开(公告)日： 2018-09-18
- 发明人: Gerhard Schmidt , Erwin Lercher
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： DE102016102861 20160218
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/761 ; H01L21/266 ; H01L21/04 ; H01L21/34 ; H01L21/40 ; H01L29/06 ; H01L29/40 ; H01L29/10 ; H01L21/762 ; H01L21/225 ; H01L29/423 ; H01L29/739 ; H01L29/66
摘要：
A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.
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