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公开(公告)号：US20160322472A1
公开(公告)日：2016-11-03
申请号：US15142992
申请日：2016-04-29
发明人： Daniel Schloegl , Johannes Baumgartl , Matthias Kuenle , Erwin Lercher , Hans-Joachim Schulze , Christoph Weiss
IPC分类号： H01L29/66 , H01L29/10 , H01L21/265 , H01L29/06 , H01L21/02 , H01L21/283 , H01L29/739 , H01L29/08
CPC分类号： H01L29/7395 , H01L21/0257 , H01L21/0262 , H01L21/265 , H01L21/266 , H01L21/283 , H01L29/0634 , H01L29/0688 , H01L29/0804 , H01L29/0834 , H01L29/1095 , H01L29/1608 , H01L29/167 , H01L29/20 , H01L29/2003 , H01L29/36 , H01L29/6606 , H01L29/6609 , H01L29/66204 , H01L29/66325 , H01L29/66333 , H01L29/66712 , H01L29/7802 , H01L29/861 , H01L29/868
摘要： A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn). Epitaxially growing the drift layer includes creating, within the drift layer, a dopant concentration profile (P) of dopants of the first conductivity type along the vertical direction (Z), the dopant concentration profile (P) in the drift layer exhibiting a variation of a concentration of dopants of the first conductivity type along the vertical direction (Z).
摘要翻译： 提出了一种制造半导体器件的方法。 该方法包括：提供具有表面的半导体衬底; 沿着垂直于表面的垂直方向（Z）外延生长，在表面顶部具有背面发射极层，其中背面发射极层具有第一导电类型的掺杂剂或与第一导电类型互补的第二导电类型的掺杂剂 导电型; 沿着垂直方向（Z）外延生长具有位于背侧发射极层之上的第一导电类型的掺杂剂的漂移层，其中背面发射极层的掺杂剂浓度高于漂移层的掺杂剂浓度; 并且在所述漂移层的内部或之上产生具有所述第二导电类型的掺杂剂的体区，在所述体区和漂移层之间形成pn结（Zpn）的过渡。 外延生长漂移层包括在漂移层内产生沿着垂直方向（Z）的第一导电类型的掺杂剂的掺杂剂浓度分布（P），漂移层中的掺杂剂浓度分布（P）表现出 沿着垂直方向（Z）的第一导电类型的掺杂剂的浓度。
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2.发明授权公开(公告)号：US10727311B2
公开(公告)日：2020-07-28
申请号：US16050163
申请日：2018-07-31
发明人： Gerhard Schmidt , Johannes Konrad Baumgartl , Matthias Kuenle , Erwin Lercher , Daniel Schloegl
IPC分类号： H01L29/66 , C30B25/00 , C30B31/22 , C30B31/02 , H01L21/225 , C30B15/00 , C30B15/20 , H01L21/02 , C30B29/06 , H01L29/10
摘要： A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 1017/cm3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.
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公开(公告)号：US20170243963A1
公开(公告)日：2017-08-24
申请号：US15589352
申请日：2017-05-08
发明人： Daniel Schloegl , Johannes Baumgartl , Matthias Kuenle , Erwin Lercher , Hans-Joachim Schulze , Christoph Weiss
IPC分类号： H01L29/739 , H01L29/08 , H01L29/36 , H01L21/02 , H01L29/06 , H01L29/861 , H01L29/868 , H01L29/66 , H01L21/266 , H01L29/10 , H01L29/78
CPC分类号： H01L29/7395 , H01L21/0257 , H01L21/0262 , H01L21/265 , H01L21/266 , H01L21/283 , H01L29/0634 , H01L29/0688 , H01L29/0804 , H01L29/0834 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/167 , H01L29/20 , H01L29/2003 , H01L29/36 , H01L29/6606 , H01L29/6609 , H01L29/66204 , H01L29/66325 , H01L29/66333 , H01L29/66712 , H01L29/7802 , H01L29/7811 , H01L29/861 , H01L29/868
摘要： A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn). Epitaxially growing the drift layer includes creating, within the drift layer, a dopant concentration profile (P) of dopants of the first conductivity type along the vertical direction (Z), the dopant concentration profile (P) in the drift layer exhibiting a variation of a concentration of dopants of the first conductivity type along the vertical direction (Z).
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公开(公告)号：US11387359B2
公开(公告)日：2022-07-12
申请号：US16713392
申请日：2019-12-13
发明人： Oliver Humbel , Josef-Georg Bauer , Jens Brandenburg , Diana Car , Philipp Sebastian Koch , Angelika Koprowski , Sebastian Kremp , Thomas Kurzmann , Erwin Lercher , Holger Ruething
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66 , H01L29/739
摘要： A power semiconductor device having a power semiconductor transistor configuration includes: a semiconductor body having a front side coupled to a first load terminal structure, a backside coupled to a second load terminal structure, and a lateral chip edge; an active region for conducting a load current in a conducting state; and an edge termination region separating the active region and lateral chip edge. At the front-side, the edge termination region includes a protection region devoid of any metallic structure, unless the metallic structure is electrically shielded from below by a polysilicon layer that extends further towards the lateral chip edge than the metallic structure by a lateral distance of at least 20 μm. In a blocking state, the protection region accommodates a voltage change of at least 90% of a blocking voltage inside the semiconductor body in a lateral direction from the active region towards the lateral chip edge.
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5.发明申请公开(公告)号：US20190035909A1
公开(公告)日：2019-01-31
申请号：US16050163
申请日：2018-07-31
摘要： A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 1017/cm3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.
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公开(公告)号：US09647083B2
公开(公告)日：2017-05-09
申请号：US15142992
申请日：2016-04-29
发明人： Daniel Schloegl , Johannes Baumgartl , Matthias Kuenle , Erwin Lercher , Hans-Joachim Schulze , Christoph Weiss
IPC分类号： H01L29/74 , H01L31/111 , H01L29/66 , H01L29/739 , H01L29/10 , H01L29/08 , H01L29/06 , H01L21/283 , H01L21/265
CPC分类号： H01L29/7395 , H01L21/0257 , H01L21/0262 , H01L21/265 , H01L21/266 , H01L21/283 , H01L29/0634 , H01L29/0688 , H01L29/0804 , H01L29/0834 , H01L29/1095 , H01L29/1608 , H01L29/167 , H01L29/20 , H01L29/2003 , H01L29/36 , H01L29/6606 , H01L29/6609 , H01L29/66204 , H01L29/66325 , H01L29/66333 , H01L29/66712 , H01L29/7802 , H01L29/861 , H01L29/868
摘要： A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn). Epitaxially growing the drift layer includes creating, within the drift layer, a dopant concentration profile (P) of dopants of the first conductivity type along the vertical direction (Z), the dopant concentration profile (P) in the drift layer exhibiting a variation of a concentration of dopants of the first conductivity type along the vertical direction (Z).
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公开(公告)号：US10079281B2
公开(公告)日：2018-09-18
申请号：US15434208
申请日：2017-02-16
发明人： Gerhard Schmidt , Erwin Lercher
IPC分类号： H01L29/78 , H01L21/761 , H01L21/266 , H01L21/04 , H01L21/34 , H01L21/40 , H01L29/06 , H01L29/40 , H01L29/10 , H01L21/762 , H01L21/225 , H01L29/423 , H01L29/739 , H01L29/66
CPC分类号： H01L29/1095 , H01L21/04 , H01L21/2252 , H01L21/2253 , H01L21/26513 , H01L21/266 , H01L21/34 , H01L21/40 , H01L21/761 , H01L21/76202 , H01L29/0619 , H01L29/0684 , H01L29/36 , H01L29/402 , H01L29/4236 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/739 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L29/7823
摘要： A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.
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公开(公告)号：US20170243940A1
公开(公告)日：2017-08-24
申请号：US15434208
申请日：2017-02-16
发明人： Gerhard Schmidt , Erwin Lercher
IPC分类号： H01L29/10 , H01L29/40 , H01L21/762 , H01L21/266 , H01L29/66 , H01L21/225 , H01L29/423 , H01L29/78 , H01L29/739 , H01L29/06 , H01L21/761
CPC分类号： H01L29/1095 , H01L21/04 , H01L21/2253 , H01L21/266 , H01L21/34 , H01L21/40 , H01L21/761 , H01L21/76202 , H01L29/0619 , H01L29/0684 , H01L29/36 , H01L29/402 , H01L29/4236 , H01L29/66348 , H01L29/66712 , H01L29/739 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L29/7823
摘要： A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.
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