Invention Grant
- Patent Title: Semiconductor devices and methods for forming a semiconductor device
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Application No.: US15434208Application Date: 2017-02-16
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Publication No.: US10079281B2Publication Date: 2018-09-18
- Inventor: Gerhard Schmidt , Erwin Lercher
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016102861 20160218
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/761 ; H01L21/266 ; H01L21/04 ; H01L21/34 ; H01L21/40 ; H01L29/06 ; H01L29/40 ; H01L29/10 ; H01L21/762 ; H01L21/225 ; H01L29/423 ; H01L29/739 ; H01L29/66
Abstract:
A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.
Public/Granted literature
- US20170243940A1 Semiconductor Devices and Methods for Forming a Semiconductor Device Public/Granted day:2017-08-24
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