Invention Grant
- Patent Title: Light emitting diode and method of fabricating the same
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Application No.: US15469253Application Date: 2017-03-24
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Publication No.: US10084112B2Publication Date: 2018-09-25
- Inventor: Kyung Wan Kim , Tae Kyoon Kim , Yeo Jin Yoon , Ye Seul Kim , Sang Hyun Oh , Jin Woong Lee , In Soo Kim
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2012-0121535 20121030; KR10-2012-0122554 20121031
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/22 ; H01L33/06 ; H01L33/32 ; H01L33/00 ; H01L33/30

Abstract:
A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
Public/Granted literature
- US20170200857A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-07-13
Information query
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