公开(公告)号：US10084112B2

公开(公告)日：2018-09-25

申请号：US15469253

申请日：2017-03-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Wan Kim ,  Tae Kyoon Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee ,  In Soo Kim

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/30

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/385 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.

公开(公告)号：US09608165B2

公开(公告)日：2017-03-28

申请号：US14795167

申请日：2015-07-09

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Wan Kim ,  Tae Kyoon Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee ,  In Soo Kim

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/20

CPC classification number: H01L33/385 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.

公开(公告)号：US09112102B2

公开(公告)日：2015-08-18

申请号：US14067455

申请日：2013-10-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Wan Kim ,  Tae Kyoon Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee ,  In Soo Kim

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/02

CPC classification number: H01L33/385 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.

Abstract translation: 提供一种发光二极管（LED）及其制造方法。 LED包括单元芯片。 单元芯片包括依次层叠在基板上的基板和第一导电型半导体层，有源层和第二导电型半导体层。 具有不规则垂直线形状的凹凸结构设置在单元芯片的侧表面中。