发明授权
- 专利标题： High planarization efficiency chemical mechanical polishing pads and methods of making
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申请号： US15264056申请日： 2016-09-13
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公开(公告)号： US10086494B2公开(公告)日： 2018-10-02
- 发明人: Jonathan G. Weis , George C. Jacob , Bhawesh Kumar , Sarah E. Mastroianni , Wenjun Xu , Nan-Rong Chiou , Mohammad T. Islam
- 申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc. , Dow Global Technologies LLC
- 申请人地址： US DE Newark US MI Midland
- 专利权人： Rohm and Haas Electronic Materials CMP Holdings, Inc.,Dow Global Technologies LLC
- 当前专利权人： Rohm and Haas Electronic Materials CMP Holdings, Inc.,Dow Global Technologies LLC
- 当前专利权人地址： US DE Newark US MI Midland
- 代理商 Andrew Merriam
- 主分类号： B24B37/24
- IPC分类号： B24B37/24 ; B24D11/00 ; B24B37/22 ; B24B53/017
摘要：
A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
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