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公开(公告)号:US10086494B2
公开(公告)日:2018-10-02
申请号:US15264056
申请日:2016-09-13
发明人: Jonathan G. Weis , George C. Jacob , Bhawesh Kumar , Sarah E. Mastroianni , Wenjun Xu , Nan-Rong Chiou , Mohammad T. Islam
IPC分类号: B24B37/24 , B24D11/00 , B24B37/22 , B24B53/017
摘要: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
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2.
公开(公告)号:US20180071888A1
公开(公告)日:2018-03-15
申请号:US15264056
申请日:2016-09-13
发明人: Jonathan G. Weis , George C. Jacob , Bhawesh Kumar , Sarah E. Mastroianni , Wenjun Xu , Nan-Rong Chiou , Mohammad T. Islam
IPC分类号: B24B37/24 , B24B53/017
CPC分类号: B24B37/245 , B24B37/22 , B24B37/24 , B24B53/017 , B24D11/00
摘要: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
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