Invention Grant
- Patent Title: Method of manufacturing Cu wiring
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Application No.: US15072165Application Date: 2016-03-16
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Publication No.: US10096548B2Publication Date: 2018-10-09
- Inventor: Kenji Matsumoto , Tadahiro Ishizaka , Peng Chang , Osamu Yokoyama , Takashi Sakuma , Hiroyuki Nagai
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2015-051626 20150316; JP2016-000490 20160105
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L21/285
Abstract:
In a Cu wiring manufacturing method, a MnOx film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOx film to reduce the surface of the MnOx film. A Ru film is formed by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.
Public/Granted literature
- US20160276218A1 METHOD OF MANUFACTURING Cu WIRING Public/Granted day:2016-09-22
Information query
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