Invention Grant
- Patent Title: Resistive memory devices and arrays
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Application No.: US15329913Application Date: 2015-01-29
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Publication No.: US10096651B2Publication Date: 2018-10-09
- Inventor: Jianhua Yang , Ning Ge , Katy Samuels , Minxian Max Zhang
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Dierker & Associates, P.C.
- International Application: PCT/US2015/013494 WO 20150129
- International Announcement: WO2016/122523 WO 20160804
- Main IPC: H01L27/24
- IPC: H01L27/24 ; G11C13/00 ; H01L45/00 ; G11C11/16

Abstract:
A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.
Public/Granted literature
- US20170271409A1 RESISTIVE MEMORY DEVICES AND ARRAYS Public/Granted day:2017-09-21
Information query
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