公开(公告)号：US10096651B2

公开(公告)日：2018-10-09

申请号：US15329913

申请日：2015-01-29

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Jianhua Yang ,  Ning Ge ,  Katy Samuels ,  Minxian Max Zhang

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00 ,  G11C11/16

Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.

公开(公告)号：US20170271409A1

公开(公告)日：2017-09-21

申请号：US15329913

申请日：2015-01-29

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Jianhua Yang ,  Ning Ge ,  Katy Samuels ,  Minxian Max Zhang

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC classification number: H01L27/2418 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625

Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.