Invention Grant
- Patent Title: Photodetector using bandgap-engineered 2D materials and method of manufacturing the same
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Application No.: US15668997Application Date: 2017-08-04
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Publication No.: US10096735B2Publication Date: 2018-10-09
- Inventor: Jinseong Heo , Seongjun Park , Kiyoung Lee , Sangyeob Lee , Eunkyu Lee , Jaeho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0146663 20151021
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/105 ; H01L31/18 ; H01L31/0232 ; H01L31/0336 ; H01L29/66 ; H01L29/267 ; H01L31/109 ; H01L29/16
Abstract:
A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.
Public/Granted literature
- US20170338260A1 PHOTODETECTOR USING BANDGAP-ENGINEERED 2D MATERIALS AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-11-23
Information query
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