Invention Grant
- Patent Title: Semiconductor structure including a trench capping layer
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Application No.: US15457384Application Date: 2017-03-13
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Publication No.: US10103224B2Publication Date: 2018-10-16
- Inventor: Elliot John Smith , Steffen Sichler
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/12 ; H01L29/51 ; H01L29/49 ; H01L29/08 ; H01L23/535

Abstract:
A semiconductor structure includes a trench isolation structure and a trench capping layer positioned over the trench isolation structure, wherein the trench isolation layer includes a first electrically insulating material and the trench capping layer includes a second electrically insulating material that is different from the first electrically insulating material. The semiconductor structure also includes a gate structure having a gate insulation layer and a gate electrode positioned over the gate insulation layer, wherein the gate insulation layer includes a high-k material and the gate structure includes a first portion that is positioned over the trench capping layer. A sidewall spacer is positioned adjacent to the gate structure, wherein a portion of the sidewall spacer is positioned on the trench capping layer and contacts the trench capping layer laterally of the gate insulation layer.
Public/Granted literature
- US20170288015A1 SEMICONDUCTOR STRUCTURE INCLUDING A TRENCH CAPPING LAYER Public/Granted day:2017-10-05
Information query
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