Invention Grant
- Patent Title: Integrated circuit device including through-silicon via structure and method of manufacturing the same
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Application No.: US14543688Application Date: 2014-11-17
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Publication No.: US10128168B2Publication Date: 2018-11-13
- Inventor: Ju-il Choi , Kun-sang Park , Son-kwan Hwang , Ji-soon Park , Byung-lyul Park
- Applicant: Ju-il Choi , Kun-sang Park , Son-kwan Hwang , Ji-soon Park , Byung-lyul Park
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2013-0140092 20131118
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/48 ; H01L23/31 ; H01L25/065 ; H01L21/768

Abstract:
An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.
Public/Granted literature
- US20150137387A1 INTEGRATED CIRCUIT DEVICE INCLUDING THROUGH-SILICON VIA STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-05-21
Information query
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