Invention Grant
- Patent Title: Heater design for MEMS chamber pressure control
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Application No.: US15176365Application Date: 2016-06-08
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Publication No.: US10131536B2Publication Date: 2018-11-20
- Inventor: Shyh-Wei Cheng , Chih-Yu Wang , Hsi-Cheng Hsu , Hsin-Yu Chen , Ji-Hong Chiang , Jui-Chun Weng , Wei-Ding Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81B7/00 ; B81B3/00 ; B81C1/00 ; H01L49/02

Abstract:
The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.
Public/Granted literature
- US20170107100A1 HEATER DESIGN FOR MEMS CHAMBER PRESSURE CONTROL Public/Granted day:2017-04-20
Information query
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