Invention Grant
- Patent Title: Inorganic wafer having through-holes attached to semiconductor wafer
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Application No.: US15630363Application Date: 2017-06-22
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Publication No.: US10134657B2Publication Date: 2018-11-20
- Inventor: Daniel Wayne Levesque, Jr. , Garrett Andrew Piech , Aric Bruce Shorey
- Applicant: CORNING INCORPORATED
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent John P. McGroarty; John T. Haran
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/48 ; H01L21/762 ; H01L21/311 ; H01L21/768 ; H01L21/306 ; H01L21/268 ; H01L21/683 ; B81B7/00 ; B81C1/00

Abstract:
A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.
Public/Granted literature
- US20180005922A1 INORGANIC WAFER HAVING THROUGH-HOLES ATTACHED TO SEMICONDUCTOR WAFER Public/Granted day:2018-01-04
Information query
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