- 专利标题: Prevention of neighboring plane disturb in non-volatile memory
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申请号: US15585680申请日: 2017-05-03
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公开(公告)号: US10141064B1公开(公告)日: 2018-11-27
- 发明人: Kirubakaran Periyannan , Daniel Joseph Linnen
- 申请人: SANDISK TECHNOLOGIES LLC
- 申请人地址: US TX Addison
- 专利权人: SanDisk Technologies LLC
- 当前专利权人: SanDisk Technologies LLC
- 当前专利权人地址: US TX Addison
- 代理机构: Vierra Magen Marcus LLP
- 主分类号: G11C16/24
- IPC分类号: G11C16/24 ; G11C16/10 ; G11C16/26 ; G11C16/34 ; G11C16/30 ; G11C16/08 ; G11C16/14
摘要:
Techniques are presented for the prevention and detection of inter-plane disturbs in a memory circuit, where, when concurrently performing memory operations on multiple planes, a defect in one plane can feed back through a common supply node and adversely affect memory operations in another node. To isolate such defects to plane in which the occur, the memory supplies the elements, such as a word line, of different planes from a common supply node through a uni-directional circuit element, such as a diode. In this way, if the voltage on an element in an array gets pulled up to an elevated voltage though a defect, this elevated voltage is stopped from flowing back to the common supply node. Additionally, by comparing the voltage levels on either side of the uni-directional circuit element, it can be determined whether such a defect is present in an array.
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