A method of processing a semiconductor wafer includes forming a plurality of die in the semiconductor wafer. The semiconductor wafer has a first brittleness. The top surface the semiconductor wafer undergoes grinding to leave an inner planar surface and a rim, wherein the rim extends above the inner planar surface and around a perimeter of the grinded semiconductor wafer. The first encapsulant material is formed over the inner planar surface and contained within the rim to form a composite semiconductor wafer that has a second brittleness less than the first brittleness. The composite semiconductor wafer is singulated into the plurality of die in which each die of the plurality of die is a composite structure die.