发明授权
- 专利标题： Semiconductor devices comprising 2D-materials and methods of manufacture thereof
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申请号： US15807178申请日： 2017-11-08
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公开(公告)号： US10157737B2公开(公告)日： 2018-12-18
- 发明人: Meng-Yu Lin , Shih-Yen Lin , Si-Chen Lee , Samuel C. Pan
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd. , National Taiwan University
- 申请人地址： TW Hsinchu TW Taipei
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.,National Taiwan University
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.,National Taiwan University
- 当前专利权人地址： TW Hsinchu TW Taipei
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/02 ; H01L29/267 ; H01L29/66 ; H01L29/778 ; C01B32/186 ; H01L29/16 ; H01L29/24
摘要：
Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.
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