公开(公告)号：US20160379901A1

公开(公告)日：2016-12-29

申请号：US14753851

申请日：2015-06-29

申请人： National Taiwan University ,  Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shih-Yen Lin ,  Samuel C. Pan ,  Chong-Rong Wu ,  Xian-Rui Chang

IPC分类号： H01L21/66 ,  H01L29/778 ,  C30B29/46 ,  H01L21/02 ,  C30B25/16

CPC分类号： H01L29/778 ,  C30B25/16 ,  C30B29/46 ,  C30B29/60 ,  H01L21/0242 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02568 ,  H01L21/0262 ,  H01L22/12 ,  H01L22/20

摘要： A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.

摘要翻译： 制造包括二维（2D）材料的半导体器件的方法可以包括：在衬底上外延地形成第一二维（2D）材料层; 计算第一2D材料层的平均厚度; 将第一2D材料层的平均厚度与参考参数进行比较; 确定第一2D材料层的平均厚度基本上不等于参考参数; 并且在确定之后，在所述第一2D材料层上外延地形成第二2D材料层。

公开(公告)号：US12080557B2

公开(公告)日：2024-09-03

申请号：US17461714

申请日：2021-08-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  NATIONAL TAIWAN UNIVERSITY

发明人： Shih-Yen Lin ,  Po-Cheng Tsai ,  Yu-Wei Zhang

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L21/28194 ,  H01L21/0228 ,  H01L21/02477 ,  H01L21/823462 ,  H01L29/42364 ,  H01L29/78

摘要： A method includes forming a 2-D material semiconductor layer over a substrate; forming source/drain electrodes covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the 2-D material semiconductor layer exposed by the source/drain electrodes; forming a first gate dielectric layer over the portion of the 2-D material semiconductor layer by using a physical deposition process; forming a second gate dielectric layer over the first gate dielectric layer by using a chemical deposition process, in which a thickness of the first gate dielectric layer is less than a thickness of the second gate dielectric layer; and forming a gate electrode over the second gate dielectric layer.

公开(公告)号：US10157737B2

公开(公告)日：2018-12-18

申请号：US15807178

申请日：2017-11-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  National Taiwan University

发明人： Meng-Yu Lin ,  Shih-Yen Lin ,  Si-Chen Lee ,  Samuel C. Pan

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L29/267 ,  H01L29/66 ,  H01L29/778 ,  C01B32/186 ,  H01L29/16 ,  H01L29/24

摘要： Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

公开(公告)号：US20180068851A1

公开(公告)日：2018-03-08

申请号：US15807178

申请日：2017-11-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  National Taiwan University

发明人： Meng-Yu Lin ,  Shih-Yen Lin ,  Si-Chen Lee ,  Samuel C. Pan

IPC分类号： H01L21/02 ,  H01L29/778 ,  H01L29/66 ,  H01L29/267 ,  H01L29/16 ,  H01L29/24

CPC分类号： H01L21/02568 ,  C01B32/186 ,  H01L21/02444 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/0259 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66045 ,  H01L29/778

摘要： Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

公开(公告)号：US09859115B2

公开(公告)日：2018-01-02

申请号：US14621635

申请日：2015-02-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  National Taiwan University

发明人： Meng-Yu Lin ,  Shih-Yen Lin ,  Si-Chen Lee ,  Samuel C. Pan

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L29/267 ,  H01L29/66 ,  H01L29/778 ,  C01B32/186 ,  H01L29/16 ,  H01L29/24

CPC分类号： H01L21/02568 ,  C01B32/186 ,  H01L21/02444 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/0259 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66045 ,  H01L29/778

摘要： Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

公开(公告)号：US10403744B2

公开(公告)日：2019-09-03

申请号：US14753851

申请日：2015-06-29

申请人： National Taiwan University ,  Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shih-Yen Lin ,  Samuel C. Pan ,  Chong-Rong Wu ,  Xian-Rui Chang

IPC分类号： H01L21/786 ,  H01L29/778 ,  H01L21/02 ,  C30B25/16 ,  C30B29/46 ,  H01L21/66 ,  C30B29/60

摘要： A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.

公开(公告)号：US20160240719A1

公开(公告)日：2016-08-18

申请号：US14621635

申请日：2015-02-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  National Taiwan University

发明人： Meng-Yu Lin ,  Shih-Yen Lin ,  Si-Chen Lee ,  Samuel C. Pan

IPC分类号： H01L31/112 ,  H01L31/18 ,  H01L31/0336 ,  H01L21/02

CPC分类号： H01L21/02568 ,  C01B32/186 ,  H01L21/02444 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/0259 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66045 ,  H01L29/778

摘要： Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

摘要翻译： 描述了包括二维（2D）材料的半导体器件及其制造方法。 在一个实施例中，用于制造包括2D材料的半导体器件的方法可以包括：在衬底上外延地形成第一2D材料层; 并且在所述第一2D材料层上外延地形成第二2D材料层，所述第一2D材料层和所述第二2D材料层的组成不同。

公开(公告)号：US09142523B2

公开(公告)日：2015-09-22

申请号：US14087318

申请日：2013-11-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yu-Chih Liu ,  Chun-Cheng Lin ,  Wei-Ting Lin ,  Kuan-Lin Ho ,  Chin-Liang Chen ,  Shih-Yen Lin

IPC分类号： H01L23/10 ,  H01L23/28 ,  H01L21/50 ,  H01L21/48 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/29 ,  H01L23/367

CPC分类号： H01L23/293 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/49816 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/131 ,  H01L2224/16113 ,  H01L2224/16227 ,  H01L2224/29022 ,  H01L2224/29036 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/83191 ,  H01L2224/92225 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： A semiconductor device includes a carrier, a die including a first surface and a second surface, a plurality of first conductive bumps disposed between the second surface of the carrier and the die, wherein the die is flip bonded on the carrier, and a molding disposed over the carrier and surrounding the die, wherein the molding includes a recessed portion disposed on the first surface of the die thereby leaving a portion of the first surface is uncovered by the molding. Further, a method of manufacturing a semiconductor device includes providing a carrier, flip bonding a die on the carrier, disposing a rubber material on a first surface of the die and within the first surface of the die, and forming a molding surrounding the rubber material and covering the carrier.

摘要翻译： 半导体器件包括载体，包括第一表面和第二表面的管芯，设置在载体的第二表面和管芯之间的多个第一导电凸块，其中管芯被翻转接合在载体上，并且模制件 在所述载体上并围绕所述模具，其中所述模制件包括设置在所述模具的所述第一表面上的凹部，从而留下所述第一表面的一部分被所述模制件覆盖。 此外，制造半导体器件的方法包括提供载体，在载体上翻转接合模具，在模具的第一表面和模具的第一表面内设置橡胶材料，并且形成围绕橡胶材料的模制品 并覆盖承运人。

公开(公告)号：US20150214128A1

公开(公告)日：2015-07-30

申请号：US14163000

申请日：2014-01-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shih-Yen Lin ,  Yu-Chih Liu ,  Chin-Liang Chen ,  Wei-Ting Lin ,  Kuan-Lin Ho

IPC分类号： H01L23/367 ,  H01L21/56 ,  H01L23/10

CPC分类号： H01L23/10 ,  H01L21/563 ,  H01L23/04 ,  H01L23/3142 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83385 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/00 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/1615 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1631 ,  H01L2924/1632 ,  H01L2924/164 ,  H01L2924/014

摘要： Disclosed herein is a device having a shaped seal ring comprising a workpiece, the workpiece comprising at least one dielectric layer disposed on a first side of a substrate, a seal ring disposed in the at least one dielectric layer, and at least one groove in the seal ring. A lid is disposed over the workpiece, the workpiece extending into a recess in the lid and a first thermal interface material (TIM) contacts the seal ring and the lid, with the first TIM extending into the at least one groove. The workpiece is mounted to the package carrier. A die is mounted over a first side of workpiece and disposed in the recess. A first underfill a disposed under the die and a second underfill is disposed between the workpiece and the package carrier. The first TIM is disposed between the first underfill and the second underfill.

摘要翻译： 本文公开了一种具有包括工件的成形密封环的装置，所述工件包括设置在基板的第一侧上的至少一个电介质层，设置在所述至少一个电介质层中的密封环，以及至少一个凹槽 密封环。 盖子设置在工件上方，工件延伸到盖中的凹部中，并且第一热界面材料（TIM）接触密封环和盖子，第一TIM延伸到至少一个凹槽中。 工件安装到包装托架上。 模具安装在工件的第一侧上并设置在凹部中。 第一底部填充物设置在模具下方，第二底部填充物设置在工件和包装载体之间。 第一TIM置于第一底部填充物和第二底部填充物之间。

公开(公告)号：US20190139817A1

公开(公告)日：2019-05-09

申请号：US16222435

申请日：2018-12-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Lin Ho ,  Chin-Liang Chen ,  Wei-Ting Lin ,  Yu-Chih Liu ,  Shih-Yen Lin

IPC分类号： H01L21/762 ,  H01L25/065 ,  H01L23/00 ,  H01L23/16 ,  H01L21/683 ,  H01L23/367 ,  H01L21/56

摘要： A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.