Invention Grant
- Patent Title: Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
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Application No.: US15481301Application Date: 2017-04-06
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Publication No.: US10157769B2Publication Date: 2018-12-18
- Inventor: Sanh D. Tang , Ming Zhang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/762 ; H01L27/108 ; H01L29/66 ; H01L27/24 ; H01L21/32 ; H01L27/08 ; H01L29/861 ; H01L29/78 ; H01L45/00
Abstract:
Semiconductor devices including at least one diode over a conductive strap. The semiconductor device may include at least one conductive strap over an insulator material, at least one diode comprising a single crystalline silicon material over a conductive material, and a memory cell on the at least one diode. The at least one diode may be formed from a single crystalline silicon material. Methods of forming such semiconductor devices are also disclosed.
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