- Patent Title: CMOS and bipolar device integration including a tunable capacitor
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Application No.: US15431623Application Date: 2017-02-13
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Publication No.: US10158030B2Publication Date: 2018-12-18
- Inventor: Shiqun Gu , Gengming Tao , Richard Hammond , Ranadeep Dutta , Matthew Michael Nowak , Francesco Carobolante
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/ Seyfarth Shaw LLP
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L29/20 ; H01L29/22 ; H01L29/47 ; H01L29/737 ; H01L29/66 ; H01L27/06 ; H01L21/822 ; H01L23/00 ; H01L23/66 ; H03H11/34 ; H03H11/04
Abstract:
A tunable capacitor may include a first terminal having a first semiconductor component with a first polarity. The tunable capacitor may also include a second terminal having a second semiconductor component with a second polarity. The second component may be adjacent to the first semiconductor component. The tunable capacitor may further include a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component.
Public/Granted literature
- US20180233604A1 CMOS AND BIPOLAR DEVICE INTEGRATION INCLUDING A TUNABLE CAPACITOR Public/Granted day:2018-08-16
Information query
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