Invention Grant
- Patent Title: Metrology method and apparatus, substrates for use in such methods, lithographic system and device manufacturing method
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Application No.: US15240781Application Date: 2016-08-18
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Publication No.: US10162272B2Publication Date: 2018-12-25
- Inventor: Martin Jacobus Johan Jak , Hendrik Jan Hidde Smilde , Te-Chih Huang , Victor Emanuel Calado , Henricus Wilhelmus Maria Van Buel , Richard Johannes Franciscus Van Haren
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: EP15181751 20150820; EP16159077 20160308
- Main IPC: G06F7/20
- IPC: G06F7/20 ; G03F7/20

Abstract:
A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.
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